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http://ipicyt.repositorioinstitucional.mx/jspui/handle/1010/1954| Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells | |
| Ignacio Everardo Orozco Hinostroza MIGUEL AVALOS BORJA VICENTE DAMIAN COMPEAN GARCIA Angel Rodriguez Edgar López Luna MIGUEL ANGEL VIDAL BORBOLLA | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| https://doi.org/10.1016/j.jcrysgro.2015.11.022 | |
| A3. Quantum wells A3. Molecular beam epitaxy B2. Semiconducting III–V materials B3. Heterojunction semiconductor devices | |
| "Light emission in the three primary colors was achieved in cubic GaN/InGaN/GaN heterostructures grown by molecular beam epitaxy on MgO substrates in a single growth process. A heterostructure with four quantum wells with a width of 10 nm was grown; this quantum wells width decrease the segregation effect of In. Photoluminescence emission produced four different emission signals: violet, blue, green-yellow and red. Thus, we were able to tune energy transitions in the visible spectrum modifying the In concentration in cubic InxGa1?xN ternary alloy." | |
| Elsevier | |
| 2016 | |
| Artículo | |
| I.E. Orozco Hinostroza, M. Avalos-Borja, V.D. Compeán García, C. Cuellar Zamora, A.G. Rodríguez, E. López Luna, M.A. Vidal, Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells, Journal of Crystal Growth, Volume 435, 2016, Pages 110-113. | |
| FÍSICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Publicaciones Científicas Nanociencias y Materiales |
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| JCrystalGrowth435(2016)110.pdf | 1.1 MB | Adobe PDF | Visualizar/Abrir |