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Effect of the thickness of insulator polymeric films on the memory behavior: the case of the polymethylmethacrylate and the polystyrene
JOSE ANTONIO AVILA NIÑO
ALAN OSIRIS SUSTAITA NARVAEZ
MARISOL REYES REYES
ROMAN LOPEZ SANDOVAL
Acceso Abierto
Atribución-NoComercial-SinDerivadas
http://dx.doi.org/10.1155/2011/702464
"The effect of thickness variation on the memory behavior of the polymethylmethacrylate-(PMMA)-based devices has been investigated. The PMMA film thicknesses have been varied between 5 to 300 nm, and we have found that the film thickness determines the type of behavior: ohmic, write-once-read-many-times (WORM) memory with two ON states, WORM memory with a negative differential resistance (NDR) region, and WORM memory without NDR region. The fact that similar results were obtained using different solvents to dilute PMMA (chlorobenzene, chloroform, and dimethyl sulfoxide), as well as using an other insulating polymer such as polystyrene (PS), leads to the conclusion that the phenomenon of memory depends on the aluminum electrodes, organic film thickness, and the compliance current used during the electroformation whereas the type of organic layer (PMMA or PS) has minor influence. From here, we conclude that the conductivity switching of the insulator organic film is due to the injection of aluminum particles into the film during the first voltage cycle."
Hindawi Publishing Corporation
2011
Artículo
Inglés
J. A. Avila-Niño, A. O. Sustaita, M. Reyes-Reyes, and R. López-Sandoval, “Effect of the Thickness of Insulator Polymeric Films on the Memory Behavior: The Case of the Polymethylmethacrylate and the Polystyrene,” Journal of Nanotechnology, vol. 2011, Article ID 702464, 9 pages, 2011. doi:10.1155/2011/702464
CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA
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Aparece en las colecciones: Publicaciones Científicas Nanociencias y Materiales

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