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http://ipicyt.repositorioinstitucional.mx/jspui/handle/1010/1955| Termination of hollow core nanopipes in GaN by an AlN interlayer | |
| OSCAR EDEL CONTRERAS LOPEZ FRANCISCO RUIZ ZEPEDA MIGUEL AVALOS BORJA Armin Dadgar Alois Krost | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| https://doi.org/10.1016/j.jcrysgro.2016.09.027 | |
| Nanostructures TEM Nanopipes Metal organic vapor phase epitaxy GaN Semiconducting III-V materials | |
| "Nanopipes associated to screw dislocations are studied by transmission electron microscopy in Si-doped GaN films grown on silicon substrates. The observations revealed that dislocations had an empty core and that an AlN interlayer is suited to block their propagation. The termination mechanism is discussed in terms of strain and kinetic growth factors, which may affect the creation and propagation of nanopipes. According to the observations, it is proposed that either step pinning or lateral overgrowth occurring at the proximity of the defect assists in capping the nanopipe." | |
| Elsevier | |
| 2016 | |
| Artículo | |
| O. Contreras, F. Ruiz-Zepeda, M. Avalos-Borja, A. Dadgar, A. Krost, Termination of hollow core nanopipes in GaN by an AlN interlayer, Journal of Crystal Growth, Volume 455, 2016, Pages 43-48. | |
| FÍSICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Publicaciones Científicas Nanociencias y Materiales |
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| JCrystalGrowth455(2016)43.pdf | 1.21 MB | Adobe PDF | Visualizar/Abrir |