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Study of the presence of spherical deformations on the Al top electrode due to electroforming in rewritable organic resistive memories | |
José Antonio Ávila Niño MARISOL REYES REYES ROMAN LOPEZ SANDOVAL | |
Acceso Abierto | |
Atribución-NoComercial-SinDerivadas | |
https://doi.org/10.1039/C7CP04975G | |
Random-access memory Oxide-films Devices Resistance | |
"Physical deformations are observed at the top electrodes during the electroforming process in Al/PEDOT: PSS + nitrogen doped multiwalled carbon nanotube (N-MWCNTs)/Al rewritable resistive memory devices. These physical deformations arise from electrochemical reactions, i. e., a reduction reaction in the native Al oxide layer, which are similar to those reported in TiO2-based resistive memory devices. These memory devices are electroformed at the ON state using an similar to -2 V pulse or at the OFF state using an similar to 3 V pulse. These processes are current-controlled; a minimum compliance current is necessary to obtain the electroforming of the device, generally between 5 to 10 mA. SEM and AFM micrographs show the presence of spherical deformations at the top electrode due to O-2 gas formation generated by the reduction in the native AlOx layer during the electroformation, with a diameter of similar to 7 micrometres for positive voltage or a smaller diameter of similar to 3 micrometres for negative voltage. After top-electrode delamination, circular craters are found in the active layer in the vicinity of the N-MWCNTs, which only occurs when a negative voltage is used in the electroformation, indicating that film damage is induced by oxygen bubbles created at the bottom electrode/polymeric film interface." | |
Royal Society of Chemistry | |
2017 | |
Artículo | |
Phys. Chem. Chem. Phys., 2017,19, 25691-25696 | |
QUÍMICA | |
Versión aceptada | |
acceptedVersion - Versión aceptada | |
Aparece en las colecciones: | Publicaciones Científicas Nanociencias y Materiales |
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PhysChemChemPhys19(2017)25691.pdf | 1.88 MB | Adobe PDF | Visualizar/Abrir |